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Hafnium Sputtering Target

Crystal Grade High Purity

Hafnium (Hf) is a lustrous, silver grey metal. Hafnium-based thin films are used as an insulator in the newer generations of semiconductors. The thin film prevents copper diffusion into silicon. Amorphous hafnium oxide has a high dielectric constant, it allows reduction of the gate leakage current and improves performance of the electronics.

Hafnium is found in zirconium minerals; it is difficult to separate these 2 elements due to their chemical resemblance. Our hafnium sputtering target is made from refined crystal bar which ensures low zirconium content, high purity and high reliability.

Purity:

  • 4N (99.99%) pure, excluding zirconium (Zr)
  • ACH10: Zirconium (Zr) < 1.0 wt%
  • ACH05: Zirconium (Zr) < 0.5 wt%

Dimension:

  • 17.5” diameter max
  • 16” x 55” max

Grain Size:

  • 28 micron

Typical GDMS Analysis For ACH10 Sputtering Target

Element Concentration
Li <0.005
Be <0.001
B   0.002
F <0.05
Na   0.02
Mg <0.01
Al   0.13
Si   0.38
P <0.005
S   0.08
Cl <0.05
K <0.01
Ca <0.01
Sc <0.5
Ti   0.07
V <0.005
Cr   0.16
Mn <0.005
Fe   3.7
Element Concentration
Co   0.03
Ni   0.77
Cu   0.06
Zn <0.01
Ga <0.01
Ge <0.01
As <0.005
Se <0.05
Br <0.05
Rb <0.005
Sr < 0.05
Y <0.05
Zr ~0.54 wt%
Nb   0.07
Mo   0.2
Ru <0.005
Rh <0.01
Pd <0.05
Ag <0.005
Element Concentration
Cd <0.05
In <0.005
Sn <0.05
Sb <0.05
Te <0.05
I <0.01
Cs <0.001
Ba <0.005
La <0.005
Ce <0.005
Pr <0.005
Nd <0.005
Sm <0.005
Eu <0.005
Gd <0.005
Tb <0.005
Dy <0.005
Ho <0.005
Element Concentration
Er <0.005
Tm <0.005
Yb <0.005
Lu <0.005
Hf Matrix
Ta   5
W   0.25
Re <0.01
Os <0.05
Ir <0.1
Pt <0.1
Au <0.05
Hg <0.05
Tl <0.01
Pb <0.01
Bi <0.01
Th   0.007
U <0.001